PART |
Description |
Maker |
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
|
MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16)的CMOS掩模ROM2兆位Mx8 / 2Mx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32)的CMOS掩模ROM2兆位Mx16 / 1Mx32)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
MX29LV033A MX29LV033ATC-70 MX29LV033ATC-70G MX29LV |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
ETC
|
MX26L3220 MX26L3220XBI-12 MX26L3220XBI-90 MX26L322 |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
MX25L3239E MX25L3239EM2I10G MX25L3239EMBI10G |
32M-BIT [x 1 / x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|